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參數(shù)資料
| 型號： | SI7390DP-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | N-Channel 30-V (D-S) Fast Switching WFET |
| 中文描述： | N溝道30 V的（副）快速開關(guān)WFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 184K |
| 代理商： | SI7390DP-T1 |
Vishay Siliconix
Si7390DP
New Product
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching WFET
FEATURES
Extremely Low Qgd WFET Technology
for Low Switching Losses
TrenchFET
Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
100 % R
g
Tested
APPLICATIONS
High-Side DC/DC Conversion
- Notebook
- Server
- Workstation
Point-of-Load Conversion
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
30
0.0095 @ V
GS
= 10 V
15
0.0135 @ V
GS
= 4.5 V
13
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
Si7390DP-T1
Si7390DP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposedc. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
10 secs
Steady State
Unit
30
±20
V
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25°C
T
A
= 70°C
I
D
15
12
9
7
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
±50
4.1
5
3.2
1.5
1.8
1.1
Maximum Power Dissipation
a
T
A
= 25°C
T
A
= 70°C
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
T
J
, T
stg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
20
53
2.1
Maximum
25
70
3.2
Unit
Maximum Junction-to-Ambient (MOSFET)
a
t
≤
10 sec
Steady State
Steady State
R
thJA
°C/W
Maximum Junction-to-Case (Drain)
R
thJC
Av
a
il
ab
le
RoH
S
*
COMPLIANT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7390DP-T1-E3 | 功能描述:MOSFET 30V 15A 1.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7390DP-T1-GE3 | 功能描述:MOSFET 30V 15A 5.0W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7392ADP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET |
| SI7392ADP-T1-E3 | 功能描述:MOSFET 30V 30A 27.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7392ADP-T1-GE3 | 功能描述:MOSFET 30V 30A 27.5W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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