參數(shù)資料
型號: SI7403DN
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述: P通道20 - V(下局副局長)MOSFET的低閾值
文件頁數(shù): 3/4頁
文件大?。?/td> 41K
代理商: SI7403DN
Si7403DN
Vishay Siliconix
New Product
Document Number: 71431
S-03390
Rev. A, 02-Apr-01
www.vishay.com
3
0
1
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5
0
2
4
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10
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0.00
0.06
0.12
0.18
0.24
0.30
0
4
8
12
16
20
0
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600
800
1000
1200
1400
0
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20
Gate Charge
On-Resistance vs. Drain Current
V
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C
r
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 3.3 A
T
J
Junction Temperature ( C)
(
r
)
V
GS
= 4.5 V
V
GS
= 2.5 V
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 3.3 A
0.00
0.06
0.12
0.18
0.24
0.30
0
2
4
6
8
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
T
J
= 150 C
T
J
= 25 C
I
D
= 3.3 A
20
10
1
0
0.25
0.50
0.75
1.00
1.25
1.50
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7403DN-T1 功能描述:MOSFET 20V 4.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7404DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET
SI7404DN-T1 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7404DN-T1-E3 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7404DN-T1-GE3 功能描述:MOSFET 30V 13.3A 3.8W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube