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參數(shù)資料
| 型號(hào)： | SI6466DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.8 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 161K |
| 代理商： | SI6466DQ |
Si6466DQ Rev C(W)
Typical Characteristics
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
I D
,DRAIN
CURRE
NT
(
A
)
3.5V
2.5V
3.0V
VGS = 4.5V
2.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
R
DS
(O
N)
,NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-R
E
S
IS
T
ANC
E
VGS = 2.5V
3.5
3.0V
4.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
R
DS
(O
N)
,NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-R
E
S
IS
T
ANC
E
ID = 7.8A
VGS =4.5V
0.005
0.013
0.021
0.029
0.037
0.045
0.053
12345
VGS, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
,O
N
-R
E
S
IS
T
ANCE
(
O
HM)
ID = 4A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
I D
,DRAI
N
CURRE
NT
(A)
TA = -55
oC
25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
I S
,R
EVER
SE
DRAIN
CURRE
NT
(
A
)
TA = 125
oC
25oC
-55
oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6466DQ
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| SI6466DQ-T1 | 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6466DQ-T1-E3 | 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6467BDQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6467BDQ_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6467BDQ-T1 | 功能描述:MOSFET 12V 8.0A 1.05W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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