參數(shù)資料
型號(hào): SI6435
廠商: Fairchild Semiconductor Corporation
英文描述: 30V P-Channel PowerTrench MOSFET
中文描述: 30V的P溝道PowerTrench MOSFET的
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 110K
代理商: SI6435
Si6435DQ Rev B(W)
Typical Characteristics
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-3.5V
-4.0V
-4.5V
-3.0V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
5
10
15
20
25
30
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -4.0V
-5.0V
-4.5V
-6.0V
-7.0V
-8.0V
-10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -4.5A
V
GS
= -10V
0.02
0.04
0.06
0.08
0.1
0.12
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -2.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= - 5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
S
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