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參數資料
| 型號： | SI6435 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 30V的P溝道PowerTrench MOSFET的 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 110K |
| 代理商： | SI6435 |
Si6435DQ Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–30
V
Breakdown Voltage Temperature
–23
mV/
°
C
V
DS
= –24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–1
–1.7
5
–3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –10 V,
V
GS
= –4.5 V, I
D
= –3.4 A
V
GS
= –10 V, I
D
= –4.5A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –15 V,
I
D
= –4.5 A
I
D
= –4.5 A
27
42
38
40
70
60
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–30
A
S
12
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
854
215
112
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
rr
Reverse Recovery Time
(Note 2)
9
14
29
15
19
20
20
55
25
80
ns
ns
ns
ns
ns
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
GS
= 0 V, I
F
= –1.25 A,
dI
F
/dt = 100A/
μ
s
V
DS
= –15 V,
V
GS
= –10 V
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
2.4
3
35
nC
nC
nC
I
D
= –4.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–1.25
–1.2
A
V
V
SD
V
GS
= 0 V,
I
S
= –1.25 A
(Note 2)
–0.75
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 87
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 114
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
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相關代理商/技術參數 |
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| SI6435ADQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI6435ADQ_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI6435ADQ-T1 | 功能描述:MOSFET 30V 5.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6435ADQ-T1-E3 | 功能描述:MOSFET 30V 5.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6435ADQ-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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