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參數(shù)資料
| 型號(hào)： | SI5855DC-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| 中文描述： | P通道1.8 - V的肖特基二極管（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | SI5855DC-T1 |
Si5855DC
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72232
S-31406—Rev. A, 07-Jul-03
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
t
5 sec
MOSFET
50
60
Junction-to-Ambient
t A bi
a
Schottky
R
thJA
54
65
Steady State
d St t
MOSFET
90
110
C/W
Schottky
95
115
Junction to Foot
Junction-to-Foot
Steady State
MOSFET
R
thJF
30
40
Schottky
30
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
V
DS
= 0 V, V
GS
=
-0.45
-1.0
V
Gate-Body Leakage
I
GSS
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85 C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -2.7 A
V
GS
= -2.5 V, I
D
=
-2.2 A
V
GS
= -1.8 V, I
D
=
-1 A
V
DS
= -10 V, I
D
= -2.7 A
I
S
= -0.9 A, V
GS
= 0 V
-1
A
-5
On-State Drain Current
a
I
D(on)
-10
A
0.095
0.110
Drain-Source On-State Resistance
a
r
DS(on)
0.137
0.160
0.205
0.240
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
7
S
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
4.4
6.5
Gate-Source Charge
V
= -10 V,
V
= -4.5 V, I
= -2.7 A
DS
GS
1.4
nC
Gate-Drain Charge
D
0.65
Turn-On Delay Time
16
25
Rise Time
V
= -10 V, R
= 10
-1 A, V
GEN
= -4.5 V, R
G
= 6
30
45
Turn-Off Delay Time
I
D
30
45
ns
Fall Time
27
40
Source-Drain Reverse Recovery Time
I
F
= -0.9 A, di/dt = 100 A/ s
20
40
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1 A
0.34
0.375
V
I
F
= 1 A, T
J
= 125 C
V
r
= 20 V
V
r
= 20 V, T
J
= 85 C
V
r
= 20 V, T
J
= 125 C
V
r
= 10 V
0.255
0.290
0.05
0.500
Maximum Reverse Leakage Current
I
rm
2
20
mA
10
100
Junction Capacitance
C
T
90
pF
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| SI5856DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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