參數(shù)資料
型號(hào): Si5515DC-T1-E3
廠商: Vishay Intertechnology,Inc.
英文描述: SOCKET, FREE, SEALED, 4WAY RoHS Compliant: Yes
中文描述: 補(bǔ)充20 - V(下局副局長(zhǎng))MOSFET的
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 82K
代理商: SI5515DC-T1-E3
Si5515DC
Vishay Siliconix
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
NCHANNEL
10
3
10
2
1
10
600
10
1
10
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
P-CHANNEL
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
15
0
1
2
3
4
5
V
GS
= 5 thru 3 V
T
C
=
55 C
125 C
2.5 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
1.5 V
1 V
相關(guān)PDF資料
PDF描述
SI552 DUAL FREQUENCY VCXO (10 MHZ TO 1.4 GHZ)
SI570 ANY-RATE I2C PROGRAMMABLE XO/VCXO
Si571 ANY-RATE I2C PROGRAMMABLE XO/VCXO
SI5853DC Single P-Ch MOSFET; with integrated Schottky;
SI5853DC-T1 P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI5515DC-T1-GE3 功能描述:MOSFET N/P-CH 20V CHIPFET 1206-8 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:TrenchFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道(雙) FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時(shí)的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
SI5517DU 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET
SI5517DU_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET
SI5517DU-T1-E3 功能描述:MOSFET N-AND P-CH 20V(D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5517DU-T1-GE3 功能描述:MOSFET 20V 6.0A 8.3W 39/72mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube