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參數(shù)資料
| 型號(hào)： | Si5515DC-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | SOCKET, FREE, SEALED, 4WAY RoHS Compliant: Yes |
| 中文描述： | 補(bǔ)充20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | SI5515DC-T1-E3 |
Si5515DC
Vishay Siliconix
www.vishay.com
2
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.4
1.0
V
V
DS
= V
GS
, I
D
=
250 A
P-Ch
0.4
1.0
Gate Body Leakage
Gate-Body Leakage
I
GSS
= 0 V V
V
DS
= 0 V, V
GS
=
8 V
N-Ch
100
nA
P-Ch
100
V
DS
= 20 V, V
GS
= 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
P-Ch
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 C
N-Ch
5
V
DS
=
20 V, V
GS
= 0 V, T
J
= 85 C
P-Ch
5
On State Drain Current
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch
20
A
V
DS
5 V, V
GS
=
4.5 V
P-Ch
15
V
GS
= 4.5 V, I
D
= 4.4 A
N-Ch
0.032
0.040
V
GS
=
4.5 V, I
D
=
3.0 A
P-Ch
0.069
0.086
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 4.1 A
N-Ch
0.036
0.045
V
GS
=
2.5 V, I
D
=
2.5 A
P-Ch
0.097
0.121
V
GS
= 1.8 V, I
D
= 1.9 A
N-Ch
0.042
0.052
V
GS
=
1.8 V, I
D
=
0.6 A
P-Ch
0.137
0.171
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 4.4 A
N-Ch
22
S
V
DS
=
10 V, I
D
=
3 A
P-Ch
8
Diode Forward Voltage
a
V
SD
I
S
= 0.9 A, V
GS
= 0 V
N-Ch
0.8
1.2
V
I
S
=
0.9 A, V
GS
= 0 V
P-Ch
0.8
1.2
Dynamic
b
Total Gate Charge
Q
g
N-Ch
5
7.5
N-Channel
P-Ch
5.5
8.5
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 4.4 A
N-Ch
0.85
nC
P-Channel
4 5 V I 3 A
V
DS
=
10 V,
GS
=
4.5 V, I
=
10 V
V
P-Ch
0.91
Gate Drain Charge
Gate-Drain Charge
Q
gd
N-Ch
1
P-Ch
1.6
Turn On Delay Time
Turn-On Delay Time
t
d(on)
N-Ch
20
30
P-Ch
18
30
Rise Time
t
r
N-Channel
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
N-Ch
36
55
I
D
P-Ch
32
50
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
P-Channel
10 V R 10
=
10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
V
N-Ch
30
45
ns
I
D
P-Ch
42
65
Fall Time
t
f
N-Ch
12
20
P-Ch
26
40
Source-Drain
Reverse Recovery Time
t
rr
I
F
= 0.9 A, di/dt = 100 A/ s
N-Ch
45
90
I
F
=
0.9 A, di/dt = 100 A/ s
P-Ch
30
60
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%,
Guaranteed by design, not subject to production testing.
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