參數(shù)資料
型號(hào): SI550
廠商: Silicon Laboratories Inc.
英文描述: VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 MHZ TO 1.4 GHZ
中文描述: 壓控晶體振蕩器(VCXO)10 MHz至1.4 GHz
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 197K
代理商: SI550
Si550
2
Preliminary Rev. 0.3
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Supply Voltage
1
V
DD
3.3 V option
2.97
3.3
3.63
V
2.5 V option
2.25
2.5
2.75
1.8 V option
1.71
1.8
1.89
Supply Current
I
DD
Output enabled
90
mA
TriState mode
60
Output Enable (OE)
2
V
IH
0.75 x V
DD
V
V
IL
0.5
Operating Temperature Range
T
A
–40
85
oC
Notes:
1.
Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 8 for further details.
2.
OE pin includes a 17 k
pullup resistor to VDD. Pulling OE to ground causes outputs to tristate.
Table 2. V
C
Control Voltage Input
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Control Voltage Tuning Slope
1,2,3
K
V
10 to 90% of V
DD
45
90
135
180
ppm/V
Control Voltage Linearity
4
L
VC
BSL
–5
±1
+5
%
Incremental
–10
±5
+10
Modulation Bandwidth
BW
9.3
10.0
10.7
kHz
V
C
Input Impedance
Z
VC
500
k
Nominal Control Voltage
V
CNOM
@ f
O
3/8 x V
DD
V
Control Voltage Tuning Range
V
C
0
V
DD
V
Notes:
1.
Positive slope; selectable option by part number. See Section 3. "Ordering Information" on page 8.
2.
For best jitter and phase noise performance, always choose the smallest K
V
that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (K
V
), Stability, and Absolute Pull Range (APR)” for more information.
3.
K
V
variation is ±28% of typical values.
4.
BSL determined from deviation from best straight line fit with V
C
ranging from 10 to 90% of V
DD
. Incremental slope
determined with V
C
ranging from 10 to 90% of V
DD
.
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