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參數(shù)資料
| 型號(hào)： | SI5473DC-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 77K |
| 代理商： | SI5473DC-T1 |
Si5473DC
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.40
-1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V
-1
A
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 85 C
-5
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
-20
A
V
GS
= -4.5 V, I
D
= -5.9 A
0.022
0.027
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -5.3 A
0.028
0.0335
V
GS
= -1.8 V, I
D
= -2.2 A
V
DS
= -5
V, I
D
= -5.9 A
0.036
0.045
Forward Transconductance
a
g
fs
20
S
Diode Forward Voltage
a
V
SD
I
S
= -1.1 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
21
32
Gate-Source Charge
Q
gs
V
DS
= -6 V,
V
GS
= -4.5 V, I
D
= -5.9 A
3.1
nC
Gate-Drain Charge
Q
gd
6.0
Turn-On Delay Time
t
d(on)
25
40
Rise Time
t
r
V
= -6 V, R
= 6
-1 A, V
GEN
= -4.5 V, R
G
= 6
50
75
Turn-Off Delay Time
t
d(off)
I
D
145
220
ns
Fall Time
t
f
90
135
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.1 A, di/dt = 100 A/ s
70
105
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
0
1
2
3
4
5
V
GS
= 5 thru 2 V
T
C
= -55 C
-55 C
1.5 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5473DC-T1-E3 | 功能描述:MOSFET 12V 8.1A 2.5W 27mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5473DC-T1-GE3 | 功能描述:MOSFET 12V 8.1A 2.5W 27mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5475BDC-T1-E3 | 功能描述:MOSFET 12V 6.0A 6.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5475BDC-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:P-CHANNEL 12-V (D-S) MOSFET |
| SI5475BDC-T1-GE3 | 功能描述:MOSFET 12V 6.0A 6.3W 28mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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