- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368617 > SI5401DC (Vishay Intertechnology,Inc.) POWER PCB RELAY PDF資料下載
參數(shù)資料
| 型號(hào)： | SI5401DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | POWER PCB RELAY |
| 中文描述： | P通道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SI5401DC |
Si5401DC
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.40
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
V
DS
=
20 V, V
GS
= 0 V, T
J
= 85 C
V
DS
5 V, V
GS
=
4.5 V
V
GS
=
4.5 V, I
D
=
5.2 A
V
GS
=
2.5 V, I
D
=
4.6 A
V
GS
=
1.8 V, I
D
=
1.9 A
V
DS
=
10
V, I
D
=
5.2 A
I
S
=
1.1 A, V
GS
= 0 V
1
5
A
On-State Drain Current
a
I
D(on)
20
A
0.026
0.033
0.044
0.032
0.040
0.053
Drain-Source On-State Resistance
a
Drain Source On State Resistance
r
DS(on)
Forward Transconductance
a
g
fs
20
S
Diode Forward Voltage
a
V
SD
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
16.5
25
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
DS
=
10 V,
V
GS
=
4.5 V, I
D
=
5.2 A
1.7
3.5
9
10
25
115
70
30
140
nC
f = 1 MHz
15
40
175
105
60
V
=
10 V, R
= 10
1 A, V
GEN
=
4.5 V, R
= 6
I
D
ns
g
= 1 1 A di/dt = 100 A/ s
I
F
1.1 A, di/dt = 100 A/ s
nC
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
4
8
12
16
20
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 2 V
T
C
=
55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
1.5 V
1 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI5406DC-T1 | N-Channel 2.5-V (G-S) MOSFET |
| SI5406DC | N-Channel 2.5-V (G-S) MOSFET |
| SI5435DC | P-Channel 30-V (D-S) MOSFET; to switch white LED's; |
| SI5435DC-T1 | P-Channel 30-V (D-S) MOSFET |
| SI5445DC | P-Channel 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5401DC-T1-E3 | 功能描述:MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5401DC-T1-GE3 | 功能描述:MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5402BDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI5402BDC_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI5402BDC_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。