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參數(shù)資料
| 型號： | SI4982DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 100-V (D-S) MOSFET |
| 中文描述： | 雙N溝道100 -五（副）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 40K |
| 代理商： | SI4982DY |
Si4982DY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 70748
S-03950—Rev. B, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
1
A
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 C
20
On-State Drain Curren
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
15
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 2.6 A
0.130
0.150
V
GS
= 6 V, I
D
= 2.4 A
0.140
0.180
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 2.6 A
11
S
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
1.2
V
Dynamic
a
Total Gate Charge
Q
g
15
30
Gate-Source Charge
Q
gs
V
DS
= 50 V,
V
GS
= 10 V, I
D
= 2.6 A
2.7
nC
Gate-Drain Charge
Q
gd
4.0
Gate Resistance
R
g
1
4.4
Turn-On Delay Time
t
d(on)
10
20
Rise Time
t
r
V
= 50 V, R
= 50
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Turn-Off Delay Time
t
d(off)
I
D
30
60
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
60
90
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SI4982DY-E3 | 功能描述:MOSFET 100V 2.6A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4982DY-T1 | 功能描述:MOSFET 100V 2.6A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4982DY-T1-E3 | 功能描述:MOSFET 100V 2.6A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4982DY-T1-GE3 | 功能描述:MOSFET 100V 2.6A 2.0W 150mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4992EY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 75-V (D-S) MOSFET |
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