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參數(shù)資料
| 型號(hào)： | SI4973DY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 25-V (G-S) MOSFET |
| 中文描述： | 雙P溝道25 - V（下GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | SI4973DY-T1 |
Si4973DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72164
S-03599—Rev. A, 31-Mar-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1
-3
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
V
DS
= 0 V, V
GS
=
25
V
200
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
= 0 V, T
J
= 55 C
-25
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -7.6 A
0.018
0.023
V
GS
= -6 V, I
D
= -6.8 A
0.023
0.029
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -7.6 A
22
S
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
37
56
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -7.6 A
6
nC
Gate-Drain Charge
Q
gd
11
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
15
25
Turn-Off Delay Time
t
d(off)
I
D
115
180
ns
Fall Time
t
f
90
140
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ s
80
120
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 10 thru 5 V
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
4 V
T
C
= 125 C
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