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參數(shù)資料
| 型號(hào)： | SI4955DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| 中文描述： | 不對(duì)稱雙P溝道30-V/20-V（副）的MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | SI4955DY |
FEATURES
TrenchFET Power MOSFETs
Low Gate Drive (2.5 V) Capability For
Channel 2
APPLICATIONS
Game Station
Load Switch
Si4955DY
Vishay Siliconix
New Product
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Channel-1
30
0.054 @ V
GS
=
10 V
5.0
0.100 @ V
GS
=
4.5 V
3.7
0.027 @ V
GS
=
4.5 V
7.0
Channel-2
20
0.035 @ V
GS
=
2.5 V
6.2
0.048 @ V
GS
=
1.8 V
5.2
S
1
G
1
D
1
S
2
G
2
D
2
P-Channel MOSFET
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
P-Channel MOSFET
Ordering Information:
Si4955DY—E3
Si4955DY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
20
V
Gate-Source Voltage
V
GS
20
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
5.0
3.8
7.0
5.3
T
A
= 70 C
4.0
3.0
5.6
4.2
A
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
2
1.1
W
T
A
= 70 C
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
55
62.5
58
62.5
Steady State
90
110
91
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
33
40
34
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4955DY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| SI4955DY-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V/20V 3.8A/5.3A 8-Pin SOIC N |
| SI4955DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V/20V 3.8A/5.3A 8-Pin SOIC N T/R |
| SI4955DY-T1-E3 | 功能描述:MOSFET 30/20V 5.0/7.0A 5.4/2.7mohm@10/4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4963BDY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8 |
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