參數(shù)資料
型號： Si4971DY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： Dual P-Channel 25-V (G-S) MOSFET
中文描述： 雙P溝道25 - V（下GS）的MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 46K
代理商： SI4971DY-T1
FEATURES
TrenchFET Power MOSFET
25-V V
GS
Provides Extra Head Room for
Safe Operation
APPLICATIONS
Notebook
- Load Switch
- Battery Charger Switch
Si4971DY
Vishay Siliconix
New Product
Document Number: 72174
S-03598—Rev. A, 31-Mar-03
www.vishay.com
1
Dual P-Channel 25-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.026 @ V
GS
= -10 V
-7.2
0.033 @ V
GS
= -6 V
-6.4
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information:
Si4971DY
Si4971DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
25
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-7.2
-5.4
T
A
= 70 C
-5.7
-4.3
A
Pulsed Drain Current
I
DM
-30
continuous Source Current (Diode Conduction)
a
I
S
-1.7
-0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
46
62.5
Steady State
80
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
24
32
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.
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