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參數(shù)資料
| 型號(hào)： | SI4927DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) Battery Switch |
| 中文描述： | P溝道30 V的（副）電池開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | SI4927DY |
Si4927DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70808
S-59519—Rev. B, 04-Sep-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –24 V, V
GS
= 0 V
–1
A
V
DS
= –24 V, V
GS
= 0 V, T
J
= 55 C
–25
On-State Drain Current
a
I
D(on)
V
DS
–5 V, V
GS
= –10 V
–30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= –7.4 A
0.022
0.028
V
GS
= –4.5 V, I
D
=
–5.8 A
0.034
0.045
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –7.4 A
15
S
Diode Forward Voltage
a
V
SD
I
S
= –2.1 A, V
GS
= 0 V
–0.73
–1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –15 V V
V
GS
= –10 V, I
D
= –7.4 A
10 V I
7 4 A
38
60
Gate-Source Charge
Q
gs
8
nC
Gate-Drain Charge
Q
gd
6.8
Turn-On Delay Time
t
d(on)
V
= –15 V, R
= 15
1 A V
–1 A, V
GEN
= –10 V, R
G
= 6
15 V R
13
25
Rise Time
t
r
I
D
10 V R
9
20
Turn-Off Delay Time
t
d(off)
75
120
ns
Fall Time
t
f
42
70
Source-Drain Reverse Recovery Time
t
rr
I
F
= –2.1 A, di/dt = 100 A/ s
50
90
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4927DY-E3 | 功能描述:MOSFET 30V 7.4A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4927DY-T1 | 功能描述:MOSFET 30V 7.4A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4927DY-T1-E3 | 功能描述:MOSFET 30V 7.4A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4931DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI4931DY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
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