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參數(shù)資料
| 型號： | SI4922DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | SPICE Device Model Si4922DY |
| 中文描述： | 器件的SPICE模型Si4922DY |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 195K |
| 代理商： | SI4922DY |
SPICE Device Model Si4922DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71563
16-Apr-01
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typical
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.1
V
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 10 V
365
A
V
GS
= 10 V, I
D
= 8.8 A
0.013
V
GS
= 4.5 V, I
D
= 8.3 A
0.015
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 7.2 A
0.024
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 8.8 A
31
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.72
V
Total Gate Charge
Q
g
22.8
Gate-Source Charge
Q
gs
5.8
Gate-Drain Charge
Q
gd
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8.8 A
5.8
nC
Turn-On Delay Time
t
d(on)
13
Rise Time
t
r
17
Turn-Off Delay Time
t
d(off)
20
Fall Time
t
f
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
G
= 6
47
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
μ
s
30
ns
Notes
a. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4922DY-E3 | 功能描述:MOSFET 30V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4922DY-T1 | 功能描述:MOSFET 30V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4922DY-T1-E3 | 功能描述:MOSFET 30V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4923DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI4923DY-T1 | 功能描述:MOSFET 30V 8.3A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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