參數(shù)資料
型號: SI4896DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 80-V (D-S) MOSFET
中文描述: N通道80V(D-S)MOSFET
文件頁數(shù): 4/5頁
文件大?。?/td> 45K
代理商: SI4896DY
Si4896DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71300
S-03950—Rev. B, 26-May-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.1
1
100
I
Avalanche Current vs. Time
Time (sec)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-1.5
-1.0
-0.5
0.0
0.5
1.0
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
10
10
10
-1
0
0.01
30
60
10
20
P
Single Pulse Power
Time (sec)
1
100
10
40
0.1
D
(
10
-2
10
-3
10
-4
10
-5
T
= 125 C
T
= 25 C
50
1
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SI4896DY_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 80-V (D-S) MOSFET
SI4896DY-E3 功能描述:MOSFET 80V 9.5A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4896DY-E3 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Leaded Process Compati
SI4896DY-T1 功能描述:MOSFET 80V 9.5A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4896DY-T1-E3 功能描述:MOSFET 80V 9.5A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube