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參數(shù)資料
| 型號(hào)： | SI4876DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | SI4876DY |
Si4876DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71312
S-03950—Rev. C, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
20
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5
V
50
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5
V, I
D
= 21 A
0.0037
0.005
V
GS
= 2.5 V, I
D
= 17 A
0.0058
0.0075
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 21 A
17
S
Diode Forward Voltage
a
V
SD
I
S
= 3 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
55
80
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 21 A
13
nC
Gate-Drain Charge
Q
gd
11
Gate Resistance
R
g
2.0
2.7
4.6
Turn-On Delay Time
t
d(on)
40
60
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 10 V, R
G
= 6
30
45
Turn-Off Delay Time
t
d(off)
I
D
175
260
ns
Fall Time
t
f
70
105
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3 A, di/dt = 100 A/ s
56
85
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 5 thru 2.5 V
25 C
T
C
= 125 C
-55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
2.0 V
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| SI4876DY-E3 | 功能描述:MOSFET 20V 21A 3.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4876DY-T1 | 功能描述:MOSFET 20V 21A 3.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4876DY-T1-E3 | 功能描述:MOSFET 20V 21A 3.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4876DY-T1-GE3 | 功能描述:MOSFET 20V 21A 3.6W 5.0mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4880DY | 功能描述:MOSFET 30V 13A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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