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參數(shù)資料
| 型號(hào)： | SI4845DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | SI4845DY |
Si4845DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= –250 A
–20
V
V
DS
Temperature Coefficient
V
DS/TJ
I
D
= –250 A
–25
mV/ C
V
GS(th)
Temperature Coefficient
V
GS(th)/TJ
2.6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.5
–1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –20 V, V
GS
= 0 V
–1
A
V
DS
= –20 V, V
GS
= 0 V, T
J
= 75 C
–10
On-State Drain Current
a
I
D(on)
V
DS
–5 V, V
GS
= –4.5 V
–5
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –2 A
0.175
0.210
V
GS
= –2.5 V, I
D
=
–1 A
0.285
0.345
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –2 A
3.5
S
Dynamic
b
Input Capacitance
C
iss
312
Output Capacitance
C
oss
V
DS
= –10 V, V
GS
= 0 V, f = 1 MHz
63
pF
Reverse Transfer Capacitance
C
rss
33
Total Gate Charge
Q
g
2.9
4.5
Gate-Source Charge
Q
gs
V
DS
= –10 V,
V
GS
= –4.5 V, I
D
= –4 A
0.72
nC
Gate-Drain Charge
Q
gd
0.65
Gate Resistance
R
g
f = 1 MHz
5.5
Turn-On Delay Time
t
d(on)
8
13
Rise Time
t
r
= –10 V, R
V
= 10 V, R
= 2.5
–4 A, V
GEN
= –4.5 V, R
g
= 1
40
60
Turn-Off Delay Time
t
d(off)
I
D
17
26
Fall Time
t
f
11
18
ns
Turn-On Delay Time
t
d(on)
3
6
Rise Time
t
r
= –10 V, R
V
DD
= 10 V, R
L
= 2.5
–4 A, V
GEN
= –10 V, R
g
= 1
10
16
Turn-Off Delay Time
t
d(off)
I
D
12
20
Fall Time
t
f
8
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 C
–2.7
A
Pulse Diode Forward Current
a
I
SM
–7
Body Diode Voltage
V
SD
I
S
= –1.9 A, V
GS
= 0 V
–0.85
–1.2
V
Body Diode Reverse Recovery Time
t
rr
24
40
ns
Body Diode Reverse Recovery Charge
Q
rr
= –2 A di/dt = 100A/ s T
I
F
= –2 A, di/dt = 100 A/ s, T
J
= 25 C
14
20
nC
Reverse Recovery Fall Time
t
a
14
ns
Reverse Recovery Rise Time
t
b
10
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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