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參數(shù)資料
| 型號： | Si4511DY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SI4511DY-E3 |
Si4511DY
Vishay Siliconix
www.vishay.com
2
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
GS( h)
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
1.8
V
V
DS
= V
GS
, I
D
=
250 A
P-Ch
0.6
1.4
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
16 V
N-Ch
100
nA
V
DS
= 0 V, V
GS
=
12 V
P-Ch
100
V
DS
= 20 V, V
GS
= 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
16 V, V
GS
= 0 V
P-Ch
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
5
V
DS
=
16 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
5
On State Drain Current
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
N-Ch
40
A
V
DS
=
5 V, V
GS
=
4.5 V
P-Ch
40
V
GS
= 10 V, I
D
= 9.6 A
N-Ch
0.0115
0.0145
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
=
4.5 V, I
D
=
6.2 A
P-Ch
0.022
0.033
V
GS
= 4.5 V, I
D
= 8.6 A
N-Ch
0.0135
0.017
V
GS
=
2.5 V, I
D
=
5 A
P-Ch
0.035
0.050
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 9.6 A
N-Ch
33
S
V
DS
=
15 V, I
D
=
6.2 A
P-Ch
17
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.8
1.2
V
I
S
=
1.7 A, V
GS
= 0 V
P-Ch
0.8
1.2
Dynamic
a
Total Gate Charge
Q
g
N-Ch
11.5
18
N-Channel
P-Ch
17
20
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 9.6 A
N-Ch
3.7
nC
P-Channel
4 5 V I 6 2 A
V
DS
=
10 V,
GS
=
4.5 V, I
=
6.2 A
10 V
V
P-Ch
4.1
Gate Drain Charge
Gate-Drain Charge
Q
gd
N-Ch
3.3
P-Ch
4.3
Turn On Delay Time
Turn-On Delay Time
t
d(on)
N-Ch
12
20
N Ch
N-Channel
P-Ch
25
40
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
1
A, V
GEN
= 10 V, R
g
= 6
N-Ch
12
20
I
D
P-Ch
30
45
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
P-Channel
10 V R 10
DD
=
10 V, R
= 10
1
A, V
GEN
=
4.5 V, R
g
= 6
V
N-Ch
55
85
ns
I
D
P-Ch
70
105
Fall Time
t
f
N-Ch
15
25
P-Ch
50
75
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
N-Ch
50
100
I
F
=
1.7 A, di/dt = 100 A/ s
P-Ch
40
80
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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