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參數(shù)資料
| 型號(hào)： | SI4505DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N- and P-Channel MOSFET |
| 中文描述： | N溝道和P溝道MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SI4505DY |
Si4505DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71826
S-20829
—
Rev. A, 17-Jun-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.8
1.8
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
P-Ch
–
0.45
1.0
V
V
DS
= 0 V, V
GS
=
20 V
N-Ch
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
P-Ch
100
nA
V
DS
= 24 V, V
GS
= 0 V
N-Ch
1
V
DS
=
–
6.4 V, V
GS
= 0 V
P-Ch
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
5
A
V
DS
=
–
6.4 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
–
5
V
DS
= 5 V, V
GS
= 10 V
N-Ch
20
On-State Drain Current
b
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
P-Ch
–
20
A
V
GS
= 10 V, I
D
= 7.8 A
N-Ch
0.015
0.018
V
GS
=
–
4.5 V, I
D
=
–
5.0 A
P-Ch
0.030
0.042
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 6.4 A
N-Ch
0.022
0.027
V
GS
=
–
2.5 V, I
D
=
–
4.0 A
P-Ch
0.048
0.060
V
DS
= 15 V, I
D
= 7.8 A
N-Ch
18
Forward Transconductance
b
g
fs
V
DS
=
–
15 V, I
D
=
–
5.0 A
P-Ch
12
S
I
S
= 1.8 A, V
GS
= 0 V
N-Ch
0.73
1.1
Diode Forward Voltage
b
V
SD
I
S
=
–
1.8 A, V
GS
= 0 V
P-Ch
–
0.75
–
1.1
V
Dynamic
a
N-Ch
11.5
20
Total Gate Charge
Q
g
P-Ch
13.5
20
N-Channel
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 7.8 A
N-Ch
3
Gate-Source Charge
Q
gs
P-Channel
P-Ch
2.2
nC
V
DS
=
–
4 V,
V
GS
=
–
5 V, I
D
=
–
5.0 A
N-Ch
4
Gate-Drain Charge
Q
gd
P-Ch
3
N-Ch
15
25
Turn-On Delay Time
t
d(on)
P-Ch
21
40
N-Channel
V
DD
= 15 V, R
L
= 15
1
A, V
GEN
= 10 V, R
G
= 6
N-Ch
8
15
Rise Time
t
r
I
D
P-Ch
45
70
P-Channel
V
DD
=
–
4 V, R
L
= 4
–
1
A, V
GEN
N-Ch
35
55
Turn-Off Delay Time
t
d(off)
I
D
=
–
4.5 V, R = 6
P-Ch
60
100
ns
N-Ch
10
20
Fall Time
t
f
P-Ch
55
85
N-Ch
30
60
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.8 A, di/dt = 100 A/ s
P-Ch
50
100
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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