- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368616 > SI4462DY (Vishay Intertechnology,Inc.) N-Channel 200-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI4462DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) MOSFET |
| 中文描述： | N溝道200 -五（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI4462DY |
Si4462DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72093
S-22098
—
Rev. A, 02-Dec-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.0
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 160 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
A
On-State Drain Current
a
I
D(on)
V
DS
5
A
V
GS
= 10
V, I
D
= 1.5 A
0.39
0.480
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 6.0
V, I
D
= 1.45 A
0.420
0.510
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 1.5A
5
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
6
9
Gate-Source Charge
Q
gs
V
DS
= 100 V,
V
GS
= 10 V, I
D
= 1.5 A
0.9
nC
Gate-Drain Charge
Q
gd
1.9
Gate Resistance
R
G
3.7
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
= 100 V, R
= 100
1.0 A, V
GEN
= 10 V, R
G
= 6
12
20
Turn-Off Delay Time
t
d(off)
I
D
10
15
ns
Fall Time
t
f
15
25
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/ s
55
90
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
1
2
3
4
5
0
2
4
6
8
10
0
1
2
3
4
5
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
4 V
相關PDF資料 |
PDF描述 |
|---|---|
| SI4470EY | N-Channel 60-V (D-S) MOSFET |
| SI4470EY-T1 | N-Channel 60-V (D-S) MOSFET |
| SI4480EY | N-Channel 80-V (D-S) MOSFET |
| SI4480EY-T1 | N-Channel 80-V (D-S) MOSFET |
| SI4486EY-T1 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4462DY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI4462DY-T1-E3 | 功能描述:MOSFET 200V 1.5A 2.5W 480mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4462DY-T1-GE3 | 功能描述:MOSFET 200V 1.5A 2.5W 480mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si4463-915-DK | 功能描述:射頻開發(fā)工具 Si4464 915MHz kit EZRadioPRO RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| SI4463-915-PDK | 制造商:Silicon Laboratories Inc 功能描述:KIT DEV WIRELESS SI4463 915MHZ |
發(fā)布緊急采購，3分鐘左右您將得到回復。