參數(shù)資料
型號： SI4450DY
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： KEYPAD 4 KEY ILLUM ARROW KEYS
中文描述： 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 2/5頁
文件大?。?/td> 98K
代理商： SI4450DY
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
60
V
Breakdown Voltage Temperature
27
mV/
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
2.5
-4.5
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A, T
J
= 125
°
C
V
GS
= 6 V, I
D
= 7.5 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 8 A
0.017
0.027
0.019
0.020
0.032
0.025
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
A
28
mS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1850
290
100
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
13
8
16
32
30
8.5
5.5
24
16
26
50
42
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V, I
D
= 1 A
V
GS
= 10 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 8 A
V
GS
= 10 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.74
θ
θ
θ
!
≤
"##
μ
$%&
≤
'#(
)*#
°
&+!
#*
'
)#*
°
&+!
##'
'
)'*
°
&+!
Si4450DY
Rev A
Electrical Characteristics
S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
T = 25°C unless otherwise noted
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4450DY 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI4450DY-E3 功能描述:MOSFET 60V 7.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4450DY-T1 功能描述:MOSFET 60V 7.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4450DY-T1-E3 功能描述:MOSFET 60V 7.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4450DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N REEL 2500
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