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參數(shù)資料
| 型號(hào)： | SI3590DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | N- and P-Channel 30-V (D-S) MOSFET |
| 中文描述： | N和P溝道30V的（D-S）MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | SI3590DV |
Si3590DV
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72032
S-21979
—
Rev. A, 04-Nov-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
1.5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
P-Ch
-0.6
-1.5
V
N-Ch
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
P-Ch
100
nA
V
DS
= 24 V, V
GS
= 0 V
N-Ch
1
V
DS
= -24 V, V
GS
= 0 V
P-Ch
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
5
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
-5
V
DS
5 V, V
GS
= 4.5 V
N-Ch
5
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
P-Ch
-5
A
V
GS
= 4.5 V, I
D
= 3 A
N-Ch
0.062
0.077
V
GS
= -4.5 V, I
D
= -2 A
P-Ch
0.135
0.170
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 2 A
N-Ch
0.095
0.120
V
GS
= -2.5 V, I
D
= -1.2 A
P-Ch
0.235
0.300
V
DS
= 5 V, I
D
= 3 A
N-Ch
10
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -2 A
P-Ch
5
S
I
S
= 1.05 A, V
GS
= 0 V
N-Ch
0.80
1.10
Diode Forward Voltage
a
V
SD
I
S
= -1.05 A, V
GS
= 0 V
P-Ch
-0.83
-1.10
V
Dynamic
b
N-Ch
3
4.5
Total Gate Charge
Q
g
N-Channel
P-Ch
3.8
6
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 2 A
N-Ch
0.6
Gate-Source Charge
Q
gs
P-Channel
P-Ch
0.6
nC
V
DS
= -15 V,
V
GS
= -4.5 V, I
D
= -2 A
N-Ch
1.0
Gate-Drain Charge
Q
gd
P-Ch
1.5
N-Ch
5
8
Turn-On Delay Time
t
d(on)
P-Ch
5
8
N-Channel
N-Ch
12
23
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
I
D
P-Ch
15
23
P-Channel
N-Ch
13
23
Turn-Off Delay Time
t
d(off)
V
= -15 V, R
= 15
-1 A, V
GEN
I
D
= -10 V, R = 6
P-Ch
20
30
ns
N-Ch
7
12
Fall Time
t
f
P-Ch
20
30
Source-Drain
Reverse Recovery Time
I
F
= 1.05 A, di/dt = 100 A/ s
N-Ch
15
25
t
rr
I
F
= -1.05 A, di/dt = 100 A/ s
P-Ch
18
30
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SI3590DV_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R |
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