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參數(shù)資料
| 型號： | SI3588DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | SI3588DV |
Si3588DV
Vishay Siliconix
New Product
Document Number: 71332
S-02383—Rev. A, 23-Oct-00
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.080 @ V
GS
= 4.5 V
3.0
N-Channel
20
0.100 @ V
GS
= 2.5 V
2.6
0.128 @ V
GS
= 1.8 V
2.3
0.145 @ V
GS
= –4.5 V
–2.2
P-Channel
–20
0.200 @ V
GS
= –2.5 V
–1.8
0.300 @ V
GS
= –1.8 V
–1.5
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
–20
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
3.0
2.5
–2.2
–0.57
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
2.3
2.0
–1.8
–1.5
Pulsed Drain Current
I
DM
8
A
Continuous Source Current (Diode Conduction)
a
I
S
1.05
0.75
–1.05
–0.75
T
A
= 25 C
1.15
0.83
1.15
0.083
Maximum Power Dissipation
a
T
A
= 70 C
P
D
0.73
0.53
0.73
0.53
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
93
110
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130
150
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
90
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3588DV_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI3588DV-T1 | 功能描述:MOSFET 20V 3.0/2.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3588DV-T1-E3 | 功能描述:MOSFET 20V 3.0/2.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3588DV-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI3588DV-T1-GE3 | 功能描述:MOSFET 20V 3.0/2.2A 1.15W 128/300mohm @ 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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