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參數(shù)資料
| 型號： | SI3831DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Bi-Directional P-Channel MOSFET/Power Switch |
| 中文描述： | 雙向P通道MOSFET /電源開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 71K |
| 代理商： | SI3831DV |
Si3831DV
Vishay Siliconix
Document Number: 70785
S-56947—Rev. C, 28-Dec-98
www.vishay.com FaxBack 408-970-5600
2-1
Bi-Directional P-Channel MOSFET/Power Switch
V
DS
(V)
r
DS(on)
( )
I
D
(A)
7
0.170 @ V
GS
= –4.5 V
0.240 @ V
GS
= –2.5 V
2.4
2.0
Low r
DS(on)
Symmetrical P-Channel MOSFET
Integrated Body Bias For Bi-Directional Blocking
2.5- to 5.5-V Operation
Exceeds
2 kV ESD Protected
Solution for High-Side Battery Disconnect Switching (BDS)
Supports Battery Switching in Multiple Battery Cell
Phones, PDAs and PCS Products
Low Profile, Small Footprint TSOP-6 Package
The Si3831DV is a low on-resistance p-channel power
MOSFET providing bi-directional blocking and conduction.
Bi-directional blocking is facilitated by combining a 4-terminal
symmetric p-channel MOSFET with a body bias selector
circuit*. Circuit operation automatically biases the p-channel
body to the most positive source/drain potential thereby
maintaining a reverse bias across the diode present between
the source/drain terminals. Off-state device blocking
characteristics are symmetric, facilitating bi-directional
blocking for high-side battery switching in portable products.
Gate drive is facilitated by negatively biasing the gate relative
to the body potential. The off-state is achieved by biasing the
gate to the most positive supply voltage or to the body
potential. The Si3831DV is available in a 6-pin TSOP-6
package rated for the –25 to 85 C commercial temperature
range.
FIGURE 1.
Charger Demultiplexing
Loads
Charger
AC/DC
Adapter
Body
Bias
Body
Bias
FIGURE 2.
Battery Multiplexing (High-Side Switch)
Body
Bias
Charger
DC/DC
Body
Bias
Si3831DV
Si3831DV
Si3831DV
Si3831DV
*Patents pending.
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| SI3850DV | Complementary MOSFET Half-Bridge (N- and P-Channel) |
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| Si3853DV | Single P-Channel MOSFET with integrated Schottky; |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3831DV-T1 | 功能描述:電源開關(guān) IC - 配電 7V 2.4A 1.5W RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| SI3831DV-T1-E3 | 功能描述:電源開關(guān) IC - 配電 7V 2.4A 1.5W RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| SI3831DV-T1-GE3 | 功能描述:MOSFET 7.0V 2.4A 1.5W 170mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3850ADV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Specification Comparison |
| SI3850ADV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary MOSFET Half-Bridge (N- and P-Channel) |
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