參數(shù)資料
型號(hào)： SI3585DV
廠商： Vaishali Semiconductor
英文描述： LEGEND TILES, SET B; RoHS Compliant: Yes
中文描述： N和P溝道20 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 67K
代理商： SI3585DV
Si3585DV
Vishay Siliconix
www.vishay.com
2
Document Number: 71184
S-03512
—
Rev. B, 04-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
P-Ch
–
0.5
V
N-Ch
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
P-Ch
100
nA
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
V
DS
=
–
16 V, V
GS
= 0 V
P-Ch
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
5
A
V
DS
=
–
16 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
–
5
V
DS
5 V, V
GS
= 4.5 V
N-Ch
5
On-State Drain Current
a
I
D(on)
V
DS
–
5 V, V
GS
=
–
4.5 V
P-Ch
–
5
A
V
GS
= 4.5 V, I
D
= 2.4 A
N-Ch
0.100
0.125
V
GS
=
–
4.5 V, I
D
=
–
1.8 A
P-Ch
0.160
0.200
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 1.8 A
N-Ch
0.160
0.200
V
GS
=
–
2.5 V, I
D
=
–
1.2 A
P-Ch
0.280
0.340
V
DS
= 5 V, I
D
= 2.4 A
N-Ch
5
Forward Transconductance
a
g
fs
V
DS
=
–
5 V, I
D
=
–
1.8 A
P-Ch
3.6
S
I
S
= 1.05 A, V
GS
= 0 V
N-Ch
0.80
1.10
Diode Forward Voltage
a
V
SD
I
S
=
–
1.05 A, V
GS
= 0 V
P-Ch
–
0.83
–
1.10
V
Dynamic
b
N-Ch
2.1
3.2
Total Gate Charge
Q
g
N-Channel
P-Ch
2.7
4.0
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 2.4 A
N-Ch
0.3
Gate-Source Charge
Q
gs
P-Channel
P-Ch
0.4
nC
V
DS
=
–
10 V,
V
GS
=
–
4.5 V, I
D
=
–
1.8 A
N-Ch
0.4
Gate-Drain Charge
Q
gd
P-Ch
0.6
N-Ch
10
17
Turn-On Delay Time
t
d(on)
P-Ch
11
17
N-Channel
N-Ch
30
50
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
I
D
P-Ch
34
50
P-Channel
N-Ch
14
25
Turn-Off Delay Time
t
d(off)
V
=
–
10 V, R
= 10
–
1 A, V
GEN
I
D
=
–
4.5 V, R = 6
P-Ch
19
30
ns
N-Ch
6
12
Fall Time
t
f
P-Ch
24
36
Source-Drain
Reverse Recovery Time
I
F
= 1.05 A, di/dt = 100 A/ s
N-Ch
30
50
t
rr
I
F
=
–
1.05 A, di/dt = 100 A/ s
P-Ch
20
40
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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