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參數(shù)資料
| 型號： | SI3452D-B01-GM |
| 廠商： | Silicon Laboratories Inc |
| 文件頁數(shù)： | 31/36頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC POE CONTROLLER MIDSPAN 40QFN |
| 特色產(chǎn)品： | Si3452 Quad High-Voltage Port Controller for PoE and PoE+PSEs |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 控制器類型： | 以太網(wǎng)供電控制器（POE） |
| 接口： | I²C |
| 電源電壓： | 3 V ~ 3.6 V |
| 電流 - 電源： | 14mA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 40-VFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 40-QFN（6x6） |
| 包裝： | 管件 |
| 配用： | SMARTPSE24-KIT-ND - KIT EVAL REF 24PORT SPI/UART |
| 其它名稱： | 336-1835-5 |
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Si3452
4
Rev. 1.3
1. Electrical Specifications
Unless noted otherwise, specifications apply over the operating temperature range with VDD = +3.3 V and
VEE = –48 V relative to GND.
VDD pins should be electrically shorted. AGND pins, DGND, GND12, and GND34 should be electrically shorted
(“GND”). VEE, VEE1, VEE2, VEE3, and VEE4 should be electrically shorted (“VEE”).
VPort for any port is measured from GND to the respective VOUTn.
Table 1. Absolute Maximum Ratings1
Type
Description
Rating
Unit
Supply Voltages
VEE to GND
–62 to +0.3
V
VDD to GND
–0.3 to +3.6
V
VDD1 to VDD2
–0.3 to +0.3
V
Any VEE to any other VEE
–0.3 to +0.3
V
Any GND to any other GND
–0.3 to +0.3
V
Voltage on Digital Pins
SDA, SCL, ADn, RST, INT
(GND – 0.3) to (VDD + 0.3)
V
Voltage on Analog Pins
VREF, AIN, AOUT, RBIAS, OSC
(GND – 0.3) to (VDD + 0.3)
V
VOUTn, DETn
(VEE – 0.3) to (GND + 0.3)
V
DETn Peak Currents During Surge Events2
±5
A
Maximum Continuous Power Dissipation3
1.2
W
Maximum Junction Temperature
125
°C
Ambient Storage Temperature
–55 to 150
°C
Lead Temperature (Soldering, 10 seconds Maximum)
260
°C
Notes:
1.
Functional operation should be restricted to those conditions specified in Table 2. Functional operation or specification
compliance is not implied at these conditions. Stresses beyond those listed in absolute maximum ratings may cause
permanent damage to the device.
2.
See IEEE Std 802.3-2005, clause 33.4, for a description of surge events.
3.
If all ports are on with 600 mA load, the power dissipation is <1.2 W. At 85 °C ambient with the expected 32 °C/W
thermal impedance, the junction temperature would be 123.4 °C, which is within the 125 °C maximum rating.
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