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參數(shù)資料
型號(hào)： SI3232-FQ
廠商： Silicon Laboratories Inc
文件頁數(shù)： 50/128頁
文件大?。?/td> 0K
描述： IC SLIC PROG DUAL-CH 64TQFP
標(biāo)準(zhǔn)包裝： 160
功能： 用戶線路接口概念（SLIC）
接口： ISDN
電路數(shù)： 2
電源電壓： 3.13 V ~ 3.47 V
電流 - 電源： 28mA
功率（瓦特）： 280mW
工作溫度： 0°C ~ 70°C
安裝類型： 表面貼裝
封裝/外殼： 64-TQFP
供應(yīng)商設(shè)備封裝： 64-TQFP（10x10）
包裝： 托盤
Si3232
28
Preliminary Rev. 0.96
Not
Recommended
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r N
ew
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esi
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The total power threshold is exceeded (when using
the power calculator method along with the Si3200).
To provide optimal reliability, the device automatically
transitions into the open state until the user changes the
state manually, independent of whether or not the power
alarm interrupt has been masked. The PQ1E to PQ6E
bits of the IRQEN3 register are used to enable the
interrupts for each transistor power alarm, and the
PQ1S to PQ6S bits of the IRQVEC3 register are set
when a power alarm is triggered in the respective
transistor. When using the Si3200, the PQ1E bit is used
to enable the power alarm interrupt, and the PQ1S bit is
set when a Si3200 power alarm is triggered.
4.4.8. Power Dissipation Considerations
The Si3232 relies on the Si3200 to power the line from
the battery supply. The PCB layout and enclosure
conditions should be designed to allow sufficient
thermal
dissipation
out
of
the
Si3200,
and
a
programmable power alarm threshold ensures product
safety under all operating conditions. See “4.4.3. Power
on power alarm considerations. The Si3200’s thermally-
enhanced SOIC-16 package offers an exposed pad that
improves thermal dissipation out of the package when
soldered to a topside PCB pad connected to inner
power planes. Using appropriate layout practices, the
Si3200 can provide thermal performance of 55 °C/W.
The exposed path should be connected to a low-
impedance ground plane via a topside PCB pad directly
under the part. See package outlines for PCB pad
dimensions. In addition, an opposite-side PCB pad with
multiple vias connecting it to the topside pad directly
under the exposed pad further improves the overall
thermal performance of the system. Refer to “AN55:
Dual ProSLIC User Guide” or the Si3232 evaluation
board data sheet for layout guidelines for optimal
thermal dissipation.
Table 16. Register and RAM Locations used for Power Monitoring and Power Fault Detection
Parameter
Location
Register/RAM
Bits
Measurement
Range
Resolution
Si3200 Power Output Monitor
PSUM
PSUM[15:0]
0 to 34.72 W
1059.6
W
Si3200 Power Alarm Interrupt Pending
IRQVEC3
PQ1S
N/A
Si3200 Power Alarm Interrupt Enable
IRQEN3
PQ1E
N/A
Q1/Q2 Power Alarm Threshold (discrete)
Q1/Q2 Power Alarm Threshold (Si3200)
PTH12
PTH12[15:0]
0 to 16.319 W
0 to 34.72 W
498
W
1059.6
W
Q3/Q4 Power Alarm Threshold
PTH34
PTH34[15:0]
0 to 1.03 W
31.4
W
Q5/Q6 Power Alarm Threshold
PTH56
PTH56[15:0]
0 to 16.319 W
498
W
Q1/Q2 Thermal LPF Pole
PLPF12
PLPF12[15:3]
Q3/Q4 Thermal LPF Pole
PLPF34
PLPF34[15:3]
Q5/Q6 Thermal LPF Pole
PLPF56
PLPF56[15:3]
Q1–Q6 Power Alarm Interrupt Pending
IRQVEC3
TBD
N/A
Q71–Q6 Power Alarm Interrupt Enable
IRQEN3
TBD
N/A
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參數(shù)描述
SI3232-FQR 制造商:Silicon Laboratories Inc 功能描述:
SI3232-G-FQ 功能描述:電信線路管理 IC Dual-Channel SLIC RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3232-G-FQR 功能描述:電信線路管理 IC Dual-CH SLIC only Internal 65 Vrms RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3232-G-GQ 功能描述:電信線路管理 IC Dual-Channel SLIC RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3232-G-GQR 功能描述:電信線路管理 IC Dual-CH SLIC only Internal 65 Vrms RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
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