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參數(shù)資料
| 型號： | SI2319DS-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Belt Clip for 725 Wrist Strap Monitor |
| 中文描述： | P通道40 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | SI2319DS-T1-E3 |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
Si2319DS
Vishay Siliconix
Document Number: 72315
S-40844—Rev. B, 03-May-04
www.vishay.com
1
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
b
0.082 @ V
GS
=
10 V
3.0
40
0.130 @ V
GS
=
4.5 V
2.4
G
TO-236
(SOT-23)
S
D
Top View
Si2319DS (C9)*
2
3
1
*Marking Code
Ordering Information:
Si2319DS-T1
Si2319DS-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 25 C
I
D
3.0
2.3
T
A
= 70 C
2.4
1.85
A
Pulsed Drain Current
a
I
DM
12
Continuous Source Current (Diode Conduction)
b
I
S
1.0
0.62
Power Dissipation
b
T
A
= 25 C
P
D
1.25
0.75
W
T
A
= 70 C
0.8
0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
R
thJA
75
100
Maximum Junction-to-Ambient
c
120
166
C/W
Maximum Junction-to-Foot (Drain)
R
thJF
40
50
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Surface Mounted on FR4 Board.
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2319DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET -40V 3A TO-236 |
| SI2319DS-T1-GE3 | 功能描述:MOSFET 40V 3.0A 1.25W 82mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2320DS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI2320DS-T1 | 功能描述:MOSFET 200V 0.22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2321DS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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