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參數資料
| 型號： | SI1021R |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3102A; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI1021R |
Si1021R
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71410
S-21120
—
Rev. C, 01-Jul-02
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
2
4
6
8
10
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
–
Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
–
r
)
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25 C
T
J
= 125 C
Source-Drain Diode Forward Voltage
V
SD
–
Source-to-Drain Voltage (V)
–
I
S
10
T
J
=
–
55 C
V
GS
= 0 V
Threshold Voltage Variance Over Temperature
0.5
V
V
–
0.3
–
0.2
–
0.1
–
0.0
0.1
0.2
0.3
0.4
–
50
–
25
0
25
50
75
100
125
150
I
D
= 250 A
T
J
–
Junction Temperature ( C)
10
–
3
10
–
2
1
10
600
10
–
1
10
–
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 500 C/W
3. T
JM
–
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
0.01
0
1
2.5
3
100
600
0.1
P
Single Pulse Power, Junction-to-Ambient
Time (sec)
1.5
2
0.5
1
10
T
A
= 25 C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI1021R | 制造商:Vishay Siliconix 功能描述:MOSFET P SC-75A |
| SI1021R_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI1021R-T1 | 功能描述:MOSFET 60V 0.19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1021R-T1-E3 | 功能描述:MOSFET 60V 0.19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1021R-T1-GE3 | 功能描述:MOSFET 60V 190mA 250mW 700mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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