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參數(shù)資料
| 型號： | SI1021R |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3102A; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI1021R |
Si1021R
Vishay Siliconix
New Product
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS(min)
(V)
r
DS(on)
( )
V
GS(th)
(V)
I
D
(mA)
–60
4 @ V
GS
= –10 V
–1 to –3.0
–190
FEATURES
BENEFITS
APPLICATIONS
High-Side Switching
Low On-Resistance: 4
Low Threshold: –2 V (typ)
Fast Switching Speed: 20 ns (typ)
Low Input Capacitance: 20 pF (typ)
Miniature Package
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
Small Board Area
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
Marking Code: F
SC-75A
(SOT-416)
Top View
2
1
S
D
G
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
–190
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
–135
mA
Pulse Drain Current
b
I
DM
–650
T
A
= 25 C
250
Power Dissipation
a
T
A
= 85 C
P
D
130
mW
Maximum Junction-to-Ambient
a
R
thJA
500
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Surface mounted on FR4 board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1021R | 制造商:Vishay Siliconix 功能描述:MOSFET P SC-75A |
| SI1021R_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI1021R-T1 | 功能描述:MOSFET 60V 0.19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1021R-T1-E3 | 功能描述:MOSFET 60V 0.19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1021R-T1-GE3 | 功能描述:MOSFET 60V 190mA 250mW 700mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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