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參數(shù)資料
| 型號(hào)： | SHF-0289 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-3 GHz, 1.0 Watt GaAs HFET |
| 中文描述： | 的DC - 3千兆赫，1.0瓦砷化鎵異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 529K |
| 代理商： | SHF-0289 |
2
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101241 Rev A
Preliminary
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters
may cause permanent damage.
r
m
a
P
l
b
m
y
S
e
m
u
u
s
m
i
a
M
b
A
e
g
a
V
e
c
o
S
-
D
V
S
D
V
2
1
+
e
g
a
V
e
c
o
S
-
G
V
S
G
V
0
o
V
5
e
p
m
e
T
g
n
p
O
T
P
O
C
°
5
8
+
o
C
5
4
r
w
o
P
t
p
n
F
R
P
N
W
m
0
0
2
e
p
m
e
T
l
n
n
a
h
C
T
H
C
C
°
5
7
1
+
e
p
m
e
T
e
g
a
T
G
T
S
C
°
5
7
1
+
o
5
6
NOTE: I/V curves were taken using pulse sampling techniques. This
results in low duty cycle currents through the device and therefore very
low power levels. It is not recommended that these measurements be
taken in d.c. mode, as excessive current could result in damage to the
device.
Plot of I
D
vs. V
DS
for V
GS
= -2.2V to 0V
V
DS
(Volts)
I
D
(
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
1
2
3
4
5
6
7
8
V
GS
= 0 V
V
GS
= - 0.2 V
V
GS
= - 0.4
V
V
GS
= - 0.6 V
V
GS
= - 0.8 V
V
GS
= - 1.0 V
V
GS
= - 1.2 V
V
GS
= -1.4 V
V
GS
= -1.6 V
V
GS
= -1.8
V
V
GS
= -2.0 V
V
GS
= -2.2 V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SHF-0289Z | 制造商:RF Micro Devices Inc 功能描述:IC HFET ALGAAS/GAAS 1W SOT-89 |
| SHF-0589 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:0.05-3 GHz, 2 Watt GaAs HFET |
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| SHF-102-01-L-D-SM | 制造商:Samtec Inc 功能描述:.050 X .050 SHROUDED TERMINAL STRIP - Bulk |
| SHF-102-01-L-D-TH | 制造商:Samtec Inc 功能描述:CONNECTOR |
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