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| 型號： | SHF-0289 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-3 GHz, 1.0 Watt GaAs HFET |
| 中文描述： | 的DC - 3千兆赫，1.0瓦砷化鎵異質結場效應晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 529K |
| 代理商： | SHF-0289 |
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
Preliminary
EDS-101241 Rev A
Product Description
SHF-0289
DC-3 GHz, 1.0 Watt
GaAs HFET
Product Features
Patented GaAs Heterostructure FET
Technology
+30dBm Output Power at 1dB Compression
+46dBm Output IP3
High Drain Efficiency: Up to 40% at Class AB
13 dB Gain at 900MHz (Application circuit)
13 dB Gain at 1900MHz (Application circuit)
Applications
Analog and Digital Wireless System
Cellular PCS, CDPD, Wireless Data, Pagers
Electrical Specifications at Ta = 25
o
C
Stanford Microdevices’ SHF-0289 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0289 is +30dBm
when biased for Class AB operation at 8V and 250mA. The
+46 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. They are well suited
for use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Adequate heat sinking must be provided for this part to avoid
exceeding the maximum junction temperature. Methods include
the use of screws near the device, and filled vias beneath the
part to the ground plane. Refer to “Mounting and Thermal
Considerations” section on page 7 for more information.
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
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相關代理商/技術參數(shù) |
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| SHF-0289Z | 制造商:RF Micro Devices Inc 功能描述:IC HFET ALGAAS/GAAS 1W SOT-89 |
| SHF-0589 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:0.05-3 GHz, 2 Watt GaAs HFET |
| SHF-102-01-F-D-TH | 制造商:Samtec Inc 功能描述:.050 X .050 SHROUDED TERMINAL STRIP - Bulk |
| SHF-102-01-L-D-SM | 制造商:Samtec Inc 功能描述:.050 X .050 SHROUDED TERMINAL STRIP - Bulk |
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