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參數(shù)資料
| 型號： | SH8G41 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 171K |
| 代理商： | SH8G41 |
SH8G41
2001-07-10
1
TOSHIBA HIGH
SPEED THYRISTOR SILICON PLANAR TYPE
SH8G41
FOR AUTOMATIC
STROBE FLASHER APPLICATIONS
DISCHARGER (Chopper)
Type No. SH8G41 is Designed for a Small Package Device Having
ShortedTurn
Off Time and Low Turn
On Loss at High Current.
Repetitive Peak Off
State Voltage and Peak Reverse Voltage
: V
DRM
= V
RRM
= 400V
Repetitive Peak Surge On
State Current : I
TRM
= 350A
Critical Rate of Rise of On
State Current : di/dt = 100A/μs
Plastic Mold Package
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off
State and
Reverse Voltage
V
DRM
V
RRM
400
V
Non
Repetitive Peak Reverse
Voltage
(Note 1)
V
RSM
450
V
Repetitive Peak Surge On
State
Current
(Note 2)
I
TRM
350
A
Critical Rate of Rise of On
State
Current
(Note 3)
di /dt
100
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Forward Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note 1: Non
Rep. < 5ms, T
j
= 0~125°C
Note 2: C
M
= 1000μF
Note 3: i
G
= 100mA
t
gw
= 10μs
t
gr
≤
250ns
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO
220AB
―
13
10G1B
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