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參數(shù)資料
| 型號： | SGW20N60HS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed IGBT in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約高高速IGBT的技術(shù) |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 429K |
| 代理商： | SGW20N60HS |
SGP20N60HS
SGW20N60HS
Power Semiconductors
7
Rev.2 Aug-02
E
,
S
0A
10A
I
C
,
COLLECTOR CURRENT
20A
30A
40A
0,0mJ
1,0mJ
2,0mJ
E
ts
*
E
off
*)
E
on
include losses
due to diode recovery
E
on
*
E
,
S
0
10
R
G
,
GATE RESISTOR
20
30
40
0,0 mJ
0,5 mJ
1,0 mJ
E
ts
*
E
on
*
*) Eon include losses
due to diode recovery
E
off
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
R
G
=16
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=400V, V
GE
=0/15V,
I
C
=20A,
Dynamic test circuit in Figure E)
E
,
S
0°C
50°C
100°C
150°C
0,00mJ
0,25mJ
0,50mJ
0,75mJ
E
ts
*
E
on
*
*)
E
on
include losses
due to diode recovery
E
off
Z
t
,
T
1μs
10μs 100μs
t
P
,
PULSE WIDTH
1ms
10ms 100ms
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=400V,
VGE=0/15V,
I
C
=20A,
R
G
=16
,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal resistance
(
D = t
p
/
T
)
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.1882
0.3214
0.1512
0.0392
τ
,
(s)
0.1137
2.24*10
-2
7.86*10
-4
9.41*10
-5
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參數(shù)描述 |
|---|---|
| SGW20N60HSFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 36A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 36A 178W TO247-3 |
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| SGW20N60RUFTM | 功能描述:IGBT 晶體管 600V/ 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW20N60XK | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 |
| SGW23N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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