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參數(shù)資料
| 型號： | SGW15N120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)（不擴(kuò)散技術(shù)中的快速第S - IGBT的） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 414K |
| 代理商： | SGW15N120 |
Preliminary
SGW15N120
SGP15N120, SGB15N120
Power Semiconductors
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJC
0.63
R
thJA
TO-220AB
TO-247AC
TO-263AB(D2PAK)
62
40
40
R
thJA
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,
I
C
=1000
μ
A
V
GE
= 15V,
I
C
=15A
T
j
=25
°
C
T
j
=150
°
C
I
C
=600
μ
A,
V
CE
=
V
GE
V
CE
=1200V,V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=1200V,
V
GE
=0V
V
CE
=20V,
I
C
=15A
1200
-
-
Collector-emitter saturation voltage
V
CE(sat)
2.5
-
3.1
3.7
3.6
4.3
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
200
800
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
100
-
nA
S
11
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1290
155
90
130
1550
185
110
175
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=15A
V
GE
=15V
TO-220AB
TO-247AC
V
GE
=15V,
t
SC
≤
5
μ
s
100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
7
13
145
-
nH
I
C(SC)
-
-
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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參數(shù)描述 |
|---|---|
| SGW15N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 30A 198W TO247-3 |
| SGW15N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW15N60FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO247-3 |
| SGW15N60RUF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGW15N60RUFTM | 功能描述:IGBT 晶體管 600V/15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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