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參數(shù)資料
| 型號： | SGP30N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約快速IGBT技術(shù) |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 425K |
| 代理商： | SGP30N60 |
SGP30N60,
SGB30N60
SGW30N60
2
Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJC
0.5
R
thJA
TO-220AB
TO-247AC
TO-263AB
62
40
40
R
thJA
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=30A
T
j
=25
°
C
T
j
=150
°
C
I
C
=700
μ
A,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=30A
600
-
-
Collector-emitter saturation voltage
1.7
-
2.1
2.5
2.4
3.0
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
40
3000
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
100
-
nA
S
20
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1600
150
92
140
1920
180
110
182
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=30A
V
GE
=15V
TO-220AB
TO-247AC
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
≤
600V,
T
j
≤
150
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
-
-
7
13
300
-
nH
I
C(SC)
-
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGP30N60 | 制造商:Infineon Technologies AG 功能描述:IGBT TO-220 |
| SGP30N60_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
| SGP30N60_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
| SGP30N60HS | 功能描述:IGBT 晶體管 HIGH SPEED NPT TECH 600V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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