參數(shù)資料
型號： SGP15N60RUFTU
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 620K
代理商： SGP15N60RUFTU
2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
S
G
P15N60RUF
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
110
0
300
600
900
1200
1500
1800
Cres
Coes
Cies
Common Emitter
V
GE = 0V, f = 1MHz
T
C = 25
℃
C
a
p
a
cit
ance
[
p
F
]
Collector - Emitter Voltage, V
CE [V]
110
100
10
100
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 15A
T
C =
25℃ ━━
T
C = 125
℃ ------
Ton
Tr
S
w
it
ching
T
im
e
[ns]
Gate Resistance, R
G [ ]
110
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 15A
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
c
h
in
g
T
im
e
[n
s
]
Gate Resistance, R
G [ ]
110
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 15A
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
c
h
in
g
L
o
s
[
u
J
]
Gate Resistance, R
G [ ]
5
101520
2530
10
100
Ton
Tr
Common Emitter
V
GE =
± 15V, R
G = 13
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
c
h
in
g
T
im
e
[n
s
]
Collector Current, I
C [A]
5
10
15
202530
100
1000
Tf
Toff
Tf
Common Emitter
V
GE =
± 15V, R
G = 13
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
itc
h
in
g
T
im
e
[n
s
]
Collector Current, I
C [A]
相關(guān)PDF資料
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