- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374783 > SGP07N120 (SIEMENS AG) Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT) PDF資料下載
參數(shù)資料
| 型號： | SGP07N120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT技術(shù)中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴散核武器條約IGBT的技術(shù)（不擴散技術(shù)中的快速第S - IGBT的） |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 374K |
| 代理商： | SGP07N120 |
Preliminary
SGP07N120
SGB07N120
Power Semiconductors
11
Mar-00
Published by
Infineon Technologies AG i Gr
.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGB10N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| SGP10N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| SGW10N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| SGB15N60HS | High Speed IGBT in NPT-technology |
| SGB20N60 | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGP07N120XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO220 |
| SGP100 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Primary-side-control PWM Controller |
| SGP100SZ | 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 Primary-side-control PWM controller RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| SGP101SZ | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| SGP10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。