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參數(shù)資料
| 型號(hào)： | SGB15N60HS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed IGBT in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約高高速IGBT的技術(shù) |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 325K |
| 代理商： | SGB15N60HS |
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High Speed IGBT in NPT-technology
30% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
SGB15N60HS
Power Semiconductors
1
Rev 2.1 Jan 05
E
off
T
j
Marking
Package
Ordering Code
SGB15N60HS
600V
15A
200μJ
150
°
C
G15N60HS
P-TO-263-3-2
Q67040-S4535
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage static
V
CE
I
C
600
27
15
V
A
I
Cpuls
-
60
60
transient (
t
p
<1μs,
D
<0.05)
V
GE
±
20
±
30
V
μ
s
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Time limited operating junction temperature for
t
< 150h
Soldering temperature (reflow soldering, MSL1)
t
SC
10
P
tot
138
W
T
j
,
T
stg
T
j(tl)
-
-55...+150
175
220
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
G
C
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGB15N60HS_06 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology |
| SGB15N60HSATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 27A 138W TO263-3 |
| SGB15N60HSATMA2 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel |
| SGB15UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
| SGB15UFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
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