參數(shù)資料
型號(hào)： SGL160N60UF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： IGBT 晶體管
英文描述： CONNECTOR ACCESSORY
中文描述： 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 662K
代理商： SGL160N60UF
SGL160N60UFD Rev. B1
S
2002 Fairchild Semiconductor Corporation
20
40
60
80
100
120
140
160
20
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
20
40
60
80
100
120
140
160
10
100
500
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
1
10
80
30
100
1000
2000
Toff
Tf
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
1
10
80
20
100
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25
℃
T
C
= 125
℃
Ton
Tr
S
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
30
0
1000
2000
3000
4000
5000
6000
7000
8000
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
1
10
80
1000
10000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGL160N60UFD 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Ultrafast IGBT
SGL160N60UFDTU 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL160N60UFDTU 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT ULTRAFAST 600V 160A TO-264 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, ULTRAFAST, 600V, 160A, TO-264
SGL160N60UFDTU 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:IGBT
SGL160N60UFTU 功能描述:IGBT 晶體管 600V/80A/2.0V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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