參數(shù)資料
型號： SGL160N60UF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： CONNECTOR ACCESSORY
中文描述： 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 662K
代理商： SGL160N60UF
SGL160N60UFD Rev. B1
S
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coefficient of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 80mA, V
CE
= V
GE
I
C
= 80A
,
V
GE
= 15V
I
C
= 160A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
5000
600
200
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
Q
g
Total Gate Charge
Q
ge
Gate-Emitter Charge
Q
gc
Gate-Collector Charge
L
e
Internal Emitter Inductance
V
CC
= 300 V, I
C
= 80A,
R
G
= 3.9
, V
GE
=15V
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
40
101
90
75
2500
1760
4260
45
105
140
122
2785
3100
5885
345
60
95
18
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
130
150
--
--
5000
--
--
200
250
--
--
--
520
100
150
--
V
CC
= 300 V, I
C
= 80A,
R
G
= 3.9
, V
GE
= 15V
Inductive Load, T
C
= 125
°
C
V
CE
= 300 V, I
C
= 80A,
V
GE
= 15V
Measured 5mm from PKG
Symbol
Parameter
Test Conditions
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
105
4.5
8.5
112
420
Max.
1.7
--
95
--
10
--
375
--
Units
V
FM
Diode Forward Voltage
I
F
= 25A
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
V
t
rr
Diode Reverse Recovery Time
I
F
= 25A,
di/ dt = 200 A/us
ns
I
rr
Diode Peak Reverse Recovery
Current
A
Q
rr
Diode Reverse Recovery Charge
nC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGL160N60UFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultrafast IGBT
SGL160N60UFDTU 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGL160N60UFDTU 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT ULTRAFAST 600V 160A TO-264 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, ULTRAFAST, 600V, 160A, TO-264
SGL160N60UFDTU 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:IGBT
SGL160N60UFTU 功能描述:IGBT 晶體管 600V/80A/2.0V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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