參數(shù)資料
型號: SGH25N120RUF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Short Circuit Rated IGBT
中文描述: 40 A, 1200 V, N-CHANNEL IGBT
封裝: TO-3P, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 499K
代理商: SGH25N120RUF
2001 Fairchild Semiconductor Corporation
SGH25N120RUF Rev. A1
S
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
10
0
25
50
75
100
125
150
175
20V
17V
15V
12V
V
GE
= 10V
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
25
50
75
100
125
150
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
Common Emitter
V
GE
= 15V
I
C
= 25A
40A
C
C
Case Temperature, T
C
[
]
0
2
4
6
8
10
0
25
50
75
100
125
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
C
Collector - Emitter Voltage, V
CE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
50A
25A
I
C
= 13A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
50A
25A
I
C
= 13A
C
C
Gate - Emitter Voltage, V
GE
[V]
0.1
1
10
100
1000
0
10
20
30
40
50
V
= 600V
Load Current : peak of square wave
Duty cycle : 50%
T
C
= 100
power Dissipation = 55W
L
Frequency [KHz]
相關PDF資料
PDF描述
SGH30N60RUFD Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT))
SGH40N60 Ultra-Fast IGBT
SGH40N60UFD 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness
SGH40N60UF CONNECTOR ACCESSORY
SGH5N120RUFD CAP-IDC 1UF 6.3V 20% X5R SMD-0508 8-TERM PLATED-NI/SN TR-7 LOW-IND
相關代理商/技術參數(shù)
參數(shù)描述
SGH25N120RUFTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH30N60RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH30N60RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH30N60RUFDTU 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH30N60RUFTU 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube