參數(shù)資料
型號： SGH20N120RUF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Short Circuit Rated IGBT
中文描述： 32 A, 1200 V, N-CHANNEL IGBT
封裝： TO-3P, 3 PIN
文件頁數(shù)： 4/7頁
文件大小： 505K
代理商： SGH20N120RUF
SGH20N120RUF Rev. B2
S
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
500
1000
1500
2000
2500
3000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
Cies
Coes
Cres
C
Collector - Emitter Voltage, V
CE
[V]
10
100
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
T
C
= 125
℃
tr
td(on)
S
Gate Resistance, R
G
[
]
10
100
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
T
C
= 125
℃
tf
td(off)
S
Gate Resistance, R
G
[
]
10
100
1000
Common Emitter
V
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
T
C
= 125
℃
Eoff
Eon
Eoff
S
μ
J
Gate Resistance, R
G
[
]
10
15
20
25
30
35
40
10
100
Common Emitter
V
GE
=
±
15V, R
G
= 15
T
C
= 25
℃
T
C
= 125
℃
tr
td(on)
S
Collector Current, I
C
[A]
10
15
20
25
30
35
40
100
Common Emitter
V
GE
=
±
15V, R
G
= 15
T
C
= 25
℃
T
C
= 125
℃
tf
td(off)
S
Collector Current, I
C
[A]
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