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參數(shù)資料
| 型號： | SGF40N60UF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 555K |
| 代理商： | SGF40N60UF |
2001 Fairchild Semiconductor Corporation
SGF40N60UF Rev. A
S
1
10
100
200
50
100
1000
2000
Eon
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
1
10
100
200
20
100
1000
Toff
Tf
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
1
10
100
200
10
100
300
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
T
C
= 125
℃
Ton
Tr
S
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
10
15
20
25
30
35
40
20
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
1
10
30
0
500
1000
1500
2000
2500
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
10
15
20
25
30
35
40
10
100
200
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
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