參數(shù)資料
型號(hào): SGF40N60
廠商: Fairchild Semiconductor Corporation
英文描述: High Speed Switching
中文描述: 高速開(kāi)關(guān)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 357K
代理商: SGF40N60
ELECTRICAL CHARACTERISTICS (IGBT PART)
(T
c
=25
°
C,Unless Otherwise Specified)
Characteristics
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Symbol
BV
CES
V
CES/
T
J
V
GE(th)
I
CES
I
GES
V
CE
(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Min
600
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
0.6
5.5
-
-
2.0
2.6
1430
168
50
12
20
68
50
0.08
0.19
0.27
92
21
28
14
Max
-
-
7.5
250
100
2.6
-
-
-
-
-
-
100
100
-
-
0.47
138
31
42
-
Units
V
V/
°
C
V
uA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
Test Conditions
V
GE
= 0V , I
C
= 250uA
V
GE
= 0V , I
C
= 1mA
I
C
= 20mA , V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
Ic=20A, V
GE
= 15V
Ic=40A, V
GE
= 15V
V
GE
= 0V , f = 1MHz
V
CE
= 30V
V
CC
= 300V , I
C
= 20A
V
GE
= 15V
R
G
= 10
Inductive Load
Vcc = 300V
V
GE
= 15V
Ic = 20A
Measured 5mm from PKG
SGF40N60UFD
CO-PAK IGBT
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