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參數(shù)資料
| 型號： | SFWI9Z14 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 278K |
| 代理商： | SFWI9Z14 |
SFW/I9Z14
-60
--
-2.0
--
--
--
--
--
-0.05
--
--
--
--
--
90
25
10
19
21
16
9
1.8
4.2
--
--
-4.0
-100
100
-10
-100
0.5
--
350
135
35
30
50
50
40
11
--
--
2.4
270
--
--
--
75
0.17
-6.7
-27
-3.8
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=
3
.0mH, I
AS
=-
6.7
A, V
DD
=-25V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-
6.7
A, di/dt
2
0
0A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
_
O
1
O
O
O
2
3
4
_
_
P-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-20V
V
GS
=20V
V
DS
=-60V
V
DS
=-48V,T
C
=150
o
C
V
GS
=-10V,I
D
=-3.4A
V
DS
=-30V,I
D
=-3.4A
V
DD
=-30V,I
D
=-6.7A,
R
G
=24
See Fig 13
V
DS
=-48V,V
GS
=-10V,
I
D
=-6.7A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-6.7A,V
GS
=0V
T
J
=25
o
C,I
F
=-6.7A
di
F
/dt=100A/
μ
s
O
4
O
5
O
4
O
4
O
5
O
4
O
4
O
4
O
1
S
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