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參數(shù)資料
| 型號： | SFWI9Z34 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 278K |
| 代理商： | SFWI9Z34 |
SFW/I9Z14
BV
DSS
= -60 V
R
DS(on)
= 0.5
I
D
= -6.7 A
-60
-6.7
-4.7
-27
±
30
115
-6.7
3.8
-5.5
3.8
38
0.25
- 55 to +175
300
3.95
40
62.5
--
--
--
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175
o
C Operating Temperature
n
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -60V
n
Low R
DS(ON)
: 0.362
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
*
O
1
O
2
O
3
O
1
O
1
Rev. C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SFW9Z14 | Advanced Power MOSFET |
| SFI9Z14 | Advanced Power MOSFET |
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|---|---|
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| SFX ANM | 制造商:COMMSCOPE WIRELESS 功能描述: |
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| SFX-2020 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Mechanical Drawing |
| SFX-34-24T-HP-XDFH | 制造商:SOURCE 制造商全稱:Source Photonics, Inc. 功能描述:1310/1490 Integrated Diplexer Transceiver |
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